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We experimentally probe the multilevel response of GeTe, Ge2Sb2Te5 (GST), and 4% tungsten-doped GST (W-GST) phase change materials (PCMs) using two wavelengths of light: 1550 nm, which is useful for telecom-applications, and near-infrared 780 nm, which is a standard wavelength for many experiments in atomic and molecular physics. We find that the materials behave differently with the excitation at the different wavelengths and identify useful applications for each material and wavelength. We discuss thickness variation in the thin films used as well and comment on the interaction of the interface between the material and the substrate with regard to the multilevel behavior. Due to the differences in penetration depths, absorption, and index contrast, different PCMs could be more suitably used depending on the application and wavelength of operation. 

Phase change material Ge2Sb2Te5 tilted and helical nanorods films featuring 25 nm diameters are grown using the oblique and glancing angle deposition techniques. We provide insights on the growth process, structural integrity and optical responses 

We created a system for the characterization of Ge2Sb2Te5 starting with a 1550 nm CW laser and utilizing second harmonic generation through a PPLN crystal in order to achieve full pulse control at 775 nm. 

Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due to their high write and read speeds, reversible phase transition, high degree of scalability, low power consumption, good data retention, and multi-level storage capability. However, GST-based PCMs have shown recent promise in other domains, such as in spatial light modulation, beam steering, and neuromorphic computing. This paper reviews the progress in GST-based PCMs and methods for improving the performance within the context of new applications that have come to light in recent years. 

We present an advancement towards high speed (sub ps) phase change material based spatial light modulators by electrically addressing single pixels with high-speed optical monitoring at 1550nm light. 

The development of active metadevices continues to present keystone challenges in fields of plasmonics and photonics. Here, we demonstrate an analogue of electromagnetically induced transparency (EIT) effect in a far-infrared metasurface device via near-field coupling of bright and quasi-dark resonances resonating at nearly the same frequency with contrasting line widths. The proposed metasurface was further optimized numerically in order to demonstrate a reconfiguration effect (frequency-shift of the spectral response). The tunability property of the device is achieved by incorporating a thin layer of Ge 2 Sb 2 Te 5 (GST), a temperature-driven phase change material (PCM). Theoretical analysis based on a coupled Lorentz oscillator model explains the physical mechanism in the proposed design and shows a good agreement with the observed results. Such active hybrid EIT metadevices could have applications in tunable slow-light effects, delay bandwidth management and ultrafast laser induced switching. 

By doping Ge2Sb2Te5 phase change material with tungsten,we produce material with improved electrical properties while simultaneously maintaining the optical contrast necessary for light modulation and switching.